| PART |
Description |
Maker |
| AM27S21APC |
1KBIT(256X4)PROM 30NS 16BR PLA 256 X 4 OTPROM, 30 ns, PDIP16
|
Advanced Micro Devices, Inc.
|
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
| 5FF10 5FF05 5FF15 |
RECTIFIER, up to 150V, 5A, 30ns
|
Semtech Corporation
|
| AM29C833ASC |
600 MIL PLA SO GULL-WG CMOS SERIES, 8-BIT TRANSCEIVER, TRUE OUTPUT, PDSO24
|
Advanced Micro Devices, Inc.
|
| GUR5H60 GURF5H60 GURB5H60 |
Ultrafast Rectifiers, Forward Current 5.0A, Reverse Voltage 600V, Reverse Recovery Time 30ns
|
VISAY[Vishay Siliconix]
|
| GLT41116-30J4 GLT41116-45J4 |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode
45ns; 64K x 16 CMOS dynamic RAM with fast page mode
|
G-LINK Technology
|
| 15-80-0125 0015800125 70567-0140 |
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 12 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 12 Circuits, 0.76渭m (30渭") Gold (Au) Selective Pla
Molex Electronics Ltd.
|
Molex Electronics Ltd.
|
| A-70567-0343 15-80-1101 0015801101 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 10 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| A-70567-0348 15-80-1201 0015801201 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 20 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 20 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| 1N6073 FF10 FF15 1N6074 1N6075 |
Axialleaded Hermetically Sealed Superfast Recovery Rectifier Diode(反向电压150V,平均正向电流1.8A，轴向引脚，密封超快恢复整流二极 Axialleaded气密密封超快速恢复整流二极管（反向电压为150V，平均正向电.8A，轴向引脚，密封超快恢复整流二极管）
Axialleaded Hermetically Sealed Superfast Recovery Rectifier Diode(反向电压50V,平均正向电流1.8A，轴向引脚，密封超快恢复整流二极 Axialleaded气密密封超快速恢复整流二极管（反向电0V的平均正向电.8A，轴向引脚，密封超快恢复整流二极管）
RECTIFIER, up to 150V, 1.8A, 30ns
|
Semtech, Corp.
Semtech Corporation
|
| HMUA-P0.9-H201 HMUA-2P0.9-H201 HMUA-P2-H107 HMUA-F |
DUPLEX FIBER OPTIC ADAPTER
MU Type Fiber Optic Connectors MU型光纤连接器
AC MEXICO
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
RECTIFIER FAST-RECOVERY DUAL COMMON-CATHODE 16A 100V 100A-ifsm 0.975V-vf 30ns 5uA-ir D2PAK 800/REEL-13
JT 41C 41#20 SKT PLUG
RECTIFIER FAST-RECOVERY SINGLE 1A 600V 35A-ifsm 1.25V-vf 50ns 5uA-ir DO-41 5K/REEL-13
Circular Connector; Body Material:Aluminum; Series:PT01; No. of Contacts:18; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Pin; Insert Arrangement:14-18
|
HIROSE ELECTRIC Co., Ltd.
圆形连接
Hirose Electric USA, INC.
|
| GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 |
E2PROM CMOS PROGRAMMABLE LOGIC DEVICE E2PROM的可编程逻辑器件的CMOS
EMI/RFI FILTER
IGBT MODULE, TRENCH, 600V, 6 PACK; Transistor type:3-Phase Bridge Inverter; Voltage, Vces:600V; Current, Ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMITOP 4; Current, Icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes
IGBT MODULE, 6 PACK 600VIGBT MODULE, 6 PACK 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, Ic continuous a max:24A; Current, Icm pulsed:22A; Power, Pd:1700W; Time, rise:30ns;
EPROM CMOS Programmable Logic Device
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
|
